A SiC Static Induction Transistor (SIT) technology for pulsed RF power amplifiers

A Static Induction Transistor (SIT) technology capable of delivering output power over 2200W at VDD of 125V in UHF band of 406MHz-450MHz is presented. The transistor technology is built on 3" 4H-SiC epitaxial wafers. L-band performance is presented based on the prototype transistor unit cells....

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Chai, F. K., Odekirk, B., Maxwell, E., Caballero, M., Fields, T., Mallinger, M., Sdrulla, D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Implants Logic gates Power amplifiers Power generation Radio frequency Silicon carbide Transistors
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