A SiC Static Induction Transistor (SIT) technology for pulsed RF power amplifiers

A SiC Static Induction Transistor (SIT) technology for pulsed RF power amplifiers

A Static Induction Transistor (SIT) technology capable of delivering output power over 2200W at VDD of 125V in UHF band of 406MHz-450MHz is presented. The transistor technology is built on 3" 4H-SiC epitaxial wafers. L-band performance is presented based on the prototype transistor unit cells....

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Bibliographische Detailangaben
Hauptverfasser: Chai, F. K., Odekirk, B., Maxwell, E., Caballero, M., Fields, T., Mallinger, M., Sdrulla, D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Implants
Logic gates
Power amplifiers
Power generation
Radio frequency
Silicon carbide
Transistors
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Beschreibung
Zusammenfassung:A Static Induction Transistor (SIT) technology capable of delivering output power over 2200W at VDD of 125V in UHF band of 406MHz-450MHz is presented. The transistor technology is built on 3" 4H-SiC epitaxial wafers. L-band performance is presented based on the prototype transistor unit cells. An improved transistor architecture is proposed to further boost frequency and power performance.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2011.5890850