A SiC Static Induction Transistor (SIT) technology for pulsed RF power amplifiers

A SiC Static Induction Transistor (SIT) technology for pulsed RF power amplifiers

A Static Induction Transistor (SIT) technology capable of delivering output power over 2200W at VDD of 125V in UHF band of 406MHz-450MHz is presented. The transistor technology is built on 3" 4H-SiC epitaxial wafers. L-band performance is presented based on the prototype transistor unit cells....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Chai, F. K., Odekirk, B., Maxwell, E., Caballero, M., Fields, T., Mallinger, M., Sdrulla, D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Implants
Logic gates
Power amplifiers
Power generation
Radio frequency
Silicon carbide
Transistors
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 303
container_issue
container_start_page 300
container_title
container_volume
creator Chai, F. K.
Odekirk, B.
Maxwell, E.
Caballero, M.
Fields, T.
Mallinger, M.
Sdrulla, D.
description A Static Induction Transistor (SIT) technology capable of delivering output power over 2200W at VDD of 125V in UHF band of 406MHz-450MHz is presented. The transistor technology is built on 3" 4H-SiC epitaxial wafers. L-band performance is presented based on the prototype transistor unit cells. An improved transistor architecture is proposed to further boost frequency and power performance.
doi_str_mv 10.1109/ISPSD.2011.5890850
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5890850</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5890850</ieee_id><sourcerecordid>5890850</sourcerecordid><originalsourceid>FETCH-LOGICAL-c224t-3c368dd2c64310bfdbfdaa5060609ea9dc8aac272458cfa7f94aad0cfe424c753</originalsourceid><addsrcrecordid>eNpVkFtLw0AQhdcbWGr_gL7soz4k7j27j6W1Gih4SX0u4150JU1CkiL99y7YF88MHJhvGJiD0DUlOaXE3JfVS7XMGaE0l9oQLckJmplCU8GE0IJxdoom1AiVkbR09o9JdZ4YUTxTWopLNBuGb5KklJFET9DrHFdxgasRxmhx2bi9HWPb4E0PzRCHse3xbVVu7vDo7VfT1u3nAYc07Pb14B1-W-Gu_fE9hl1XxxB9P1yhiwAJzo4-Re-rh83iKVs_P5aL-TqzjIkx45Yr7RyzSnBKPoJLDSCJSmU8GGc1gGUFE1LbAEUwAsARG3z6zBaST9HN393ovd92fdxBf9geA-K_1udVRw</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A SiC Static Induction Transistor (SIT) technology for pulsed RF power amplifiers</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Chai, F. K. ; Odekirk, B. ; Maxwell, E. ; Caballero, M. ; Fields, T. ; Mallinger, M. ; Sdrulla, D.</creator><creatorcontrib>Chai, F. K. ; Odekirk, B. ; Maxwell, E. ; Caballero, M. ; Fields, T. ; Mallinger, M. ; Sdrulla, D.</creatorcontrib><description>A Static Induction Transistor (SIT) technology capable of delivering output power over 2200W at VDD of 125V in UHF band of 406MHz-450MHz is presented. The transistor technology is built on 3" 4H-SiC epitaxial wafers. L-band performance is presented based on the prototype transistor unit cells. An improved transistor architecture is proposed to further boost frequency and power performance.</description><identifier>ISSN: 1063-6854</identifier><identifier>ISBN: 9781424484256</identifier><identifier>ISBN: 1424484251</identifier><identifier>EISSN: 1946-0201</identifier><identifier>EISBN: 9781424484232</identifier><identifier>EISBN: 1424484243</identifier><identifier>EISBN: 1424484235</identifier><identifier>EISBN: 9781424484249</identifier><identifier>DOI: 10.1109/ISPSD.2011.5890850</identifier><language>eng</language><publisher>IEEE</publisher><subject>Implants ; Logic gates ; Power amplifiers ; Power generation ; Radio frequency ; Silicon carbide ; Transistors</subject><ispartof>2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011, p.300-303</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c224t-3c368dd2c64310bfdbfdaa5060609ea9dc8aac272458cfa7f94aad0cfe424c753</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5890850$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5890850$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chai, F. K.</creatorcontrib><creatorcontrib>Odekirk, B.</creatorcontrib><creatorcontrib>Maxwell, E.</creatorcontrib><creatorcontrib>Caballero, M.</creatorcontrib><creatorcontrib>Fields, T.</creatorcontrib><creatorcontrib>Mallinger, M.</creatorcontrib><creatorcontrib>Sdrulla, D.</creatorcontrib><title>A SiC Static Induction Transistor (SIT) technology for pulsed RF power amplifiers</title><title>2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs</title><addtitle>ISPSD</addtitle><description>A Static Induction Transistor (SIT) technology capable of delivering output power over 2200W at VDD of 125V in UHF band of 406MHz-450MHz is presented. The transistor technology is built on 3" 4H-SiC epitaxial wafers. L-band performance is presented based on the prototype transistor unit cells. An improved transistor architecture is proposed to further boost frequency and power performance.</description><subject>Implants</subject><subject>Logic gates</subject><subject>Power amplifiers</subject><subject>Power generation</subject><subject>Radio frequency</subject><subject>Silicon carbide</subject><subject>Transistors</subject><issn>1063-6854</issn><issn>1946-0201</issn><isbn>9781424484256</isbn><isbn>1424484251</isbn><isbn>9781424484232</isbn><isbn>1424484243</isbn><isbn>1424484235</isbn><isbn>9781424484249</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkFtLw0AQhdcbWGr_gL7soz4k7j27j6W1Gih4SX0u4150JU1CkiL99y7YF88MHJhvGJiD0DUlOaXE3JfVS7XMGaE0l9oQLckJmplCU8GE0IJxdoom1AiVkbR09o9JdZ4YUTxTWopLNBuGb5KklJFET9DrHFdxgasRxmhx2bi9HWPb4E0PzRCHse3xbVVu7vDo7VfT1u3nAYc07Pb14B1-W-Gu_fE9hl1XxxB9P1yhiwAJzo4-Re-rh83iKVs_P5aL-TqzjIkx45Yr7RyzSnBKPoJLDSCJSmU8GGc1gGUFE1LbAEUwAsARG3z6zBaST9HN393ovd92fdxBf9geA-K_1udVRw</recordid><startdate>201105</startdate><enddate>201105</enddate><creator>Chai, F. K.</creator><creator>Odekirk, B.</creator><creator>Maxwell, E.</creator><creator>Caballero, M.</creator><creator>Fields, T.</creator><creator>Mallinger, M.</creator><creator>Sdrulla, D.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201105</creationdate><title>A SiC Static Induction Transistor (SIT) technology for pulsed RF power amplifiers</title><author>Chai, F. K. ; Odekirk, B. ; Maxwell, E. ; Caballero, M. ; Fields, T. ; Mallinger, M. ; Sdrulla, D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c224t-3c368dd2c64310bfdbfdaa5060609ea9dc8aac272458cfa7f94aad0cfe424c753</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Implants</topic><topic>Logic gates</topic><topic>Power amplifiers</topic><topic>Power generation</topic><topic>Radio frequency</topic><topic>Silicon carbide</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Chai, F. K.</creatorcontrib><creatorcontrib>Odekirk, B.</creatorcontrib><creatorcontrib>Maxwell, E.</creatorcontrib><creatorcontrib>Caballero, M.</creatorcontrib><creatorcontrib>Fields, T.</creatorcontrib><creatorcontrib>Mallinger, M.</creatorcontrib><creatorcontrib>Sdrulla, D.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chai, F. K.</au><au>Odekirk, B.</au><au>Maxwell, E.</au><au>Caballero, M.</au><au>Fields, T.</au><au>Mallinger, M.</au><au>Sdrulla, D.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A SiC Static Induction Transistor (SIT) technology for pulsed RF power amplifiers</atitle><btitle>2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs</btitle><stitle>ISPSD</stitle><date>2011-05</date><risdate>2011</risdate><spage>300</spage><epage>303</epage><pages>300-303</pages><issn>1063-6854</issn><eissn>1946-0201</eissn><isbn>9781424484256</isbn><isbn>1424484251</isbn><eisbn>9781424484232</eisbn><eisbn>1424484243</eisbn><eisbn>1424484235</eisbn><eisbn>9781424484249</eisbn><abstract>A Static Induction Transistor (SIT) technology capable of delivering output power over 2200W at VDD of 125V in UHF band of 406MHz-450MHz is presented. The transistor technology is built on 3" 4H-SiC epitaxial wafers. L-band performance is presented based on the prototype transistor unit cells. An improved transistor architecture is proposed to further boost frequency and power performance.</abstract><pub>IEEE</pub><doi>10.1109/ISPSD.2011.5890850</doi><tpages>4</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 1063-6854
ispartof 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011, p.300-303
issn 1063-6854
1946-0201
language eng
recordid cdi_ieee_primary_5890850
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Implants
Logic gates
Power amplifiers
Power generation
Radio frequency
Silicon carbide
Transistors
title A SiC Static Induction Transistor (SIT) technology for pulsed RF power amplifiers
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T21%3A49%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%20SiC%20Static%20Induction%20Transistor%20(SIT)%20technology%20for%20pulsed%20RF%20power%20amplifiers&rft.btitle=2011%20IEEE%2023rd%20International%20Symposium%20on%20Power%20Semiconductor%20Devices%20and%20ICs&rft.au=Chai,%20F.%20K.&rft.date=2011-05&rft.spage=300&rft.epage=303&rft.pages=300-303&rft.issn=1063-6854&rft.eissn=1946-0201&rft.isbn=9781424484256&rft.isbn_list=1424484251&rft_id=info:doi/10.1109/ISPSD.2011.5890850&rft_dat=%3Cieee_6IE%3E5890850%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424484232&rft.eisbn_list=1424484243&rft.eisbn_list=1424484235&rft.eisbn_list=9781424484249&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5890850&rfr_iscdi=true