Low on-resistance 1.2 kV 4H-SiC MOSFETs integrated with current sensor

Low on-resistance 1.2 kV 4H-SiC MOSFETs integrated with current sensor

4H-SiC MOSFETs integrated with a current sensor have been fabricated for the first time. The MOSFET shows superior characteristics with a specific on-resistance of 3.7 mΩcm 2 and a blocking voltage of 1.4 kV. The deviation of the current ratio (Imain/Isense) stays within 10% in the temperature range...

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Bibliographische Detailangaben
Hauptverfasser: Furukawa, A., Kinouchi, S., Nakatake, H., Ebiike, Y., Kagawa, Y., Miura, N., Nakao, Y., Imaizumi, M., Sumitani, H., Oomori, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Logic gates
MOSFETs
Resistors
Silicon carbide
Temperature
Temperature sensors
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Beschreibung
Zusammenfassung:4H-SiC MOSFETs integrated with a current sensor have been fabricated for the first time. The MOSFET shows superior characteristics with a specific on-resistance of 3.7 mΩcm 2 and a blocking voltage of 1.4 kV. The deviation of the current ratio (Imain/Isense) stays within 10% in the temperature range between 25°C and 175°C, which is desirable for the current sensor of high power devices. Furthermore, the main current shut-off operation at an over-current detected using the current sensor has been demonstrated successfully.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2011.5890847