GaN based Super HFETs over 700V using the polarization junction concept

GaN Super Heterojunction Field Effect Transistors (Super HFETs) based on the polarization junction (PJ) concept are demonstrated on Sapphire substrates. These Super HFETs were fabricated from a GaN/Al 0.23 Ga 0.77 N/GaN hetero structure with 2D hole and electron gas densities of 1.1×10 13 and 9.7×10...

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Bibliographische Detailangaben

Hauptverfasser:	Nakajima, A., Dhyani, M. H., Narayanan, E. M. S., Sumida, Y., Kawai, H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Electrodes Gallium nitride HEMTs Logic gates MODFETs Voltage measurement
Online-Zugang:	Volltext bestellen
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