GaN based Super HFETs over 700V using the polarization junction concept

GaN based Super HFETs over 700V using the polarization junction concept

GaN Super Heterojunction Field Effect Transistors (Super HFETs) based on the polarization junction (PJ) concept are demonstrated on Sapphire substrates. These Super HFETs were fabricated from a GaN/Al 0.23 Ga 0.77 N/GaN hetero structure with 2D hole and electron gas densities of 1.1×10 13 and 9.7×10...

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Hauptverfasser: Nakajima, A., Dhyani, M. H., Narayanan, E. M. S., Sumida, Y., Kawai, H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aluminum gallium nitride
Electrodes
Gallium nitride
HEMTs
Logic gates
MODFETs
Voltage measurement
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Zusammenfassung:GaN Super Heterojunction Field Effect Transistors (Super HFETs) based on the polarization junction (PJ) concept are demonstrated on Sapphire substrates. These Super HFETs were fabricated from a GaN/Al 0.23 Ga 0.77 N/GaN hetero structure with 2D hole and electron gas densities of 1.1×10 13 and 9.7×10 12 cm -2 at the respective hetero-interfaces. The Super HFETs show breakdown voltage above 700 V with on-resistances of 15 Ω·mm. In addition, the super HFETs have inherent body diodes and its reverse conducting characteristics are demonstrated.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2011.5890845