Temperature dependence of switching performance in IGBT circuits and its compact modeling

Temperature dependence of switching performance in IGBT circuits and its compact modeling

We have developed the compact IGBT model HiSIM-IGBT, based on a complete solution for the potential distribution, which connects the surface-potential of the MOS-FET part to the bipolar part by an iterative procedure in a self-consistent way. Here we report the self-heating extension of HiSIM-IGBT,...

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Hauptverfasser: Miyake, M., Ueno, M., Nakashima, J., Masuoka, H., Feldmann, U., Mattausch, H. J., Miura-Mattausch, Mitiko, Ogawa, T., Ueta, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Insulated gate bipolar transistors
Integrated circuit modeling
MOSFET circuits
Switches
Temperature dependence
Temperature measurement
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Beschreibung
Zusammenfassung:We have developed the compact IGBT model HiSIM-IGBT, based on a complete solution for the potential distribution, which connects the surface-potential of the MOS-FET part to the bipolar part by an iterative procedure in a self-consistent way. Here we report the self-heating extension of HiSIM-IGBT, a compact model for power diode including the reverse recovery effect and the model application to accurate prediction of experimental switching characteristics.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2011.5890812