Single crystal silicon contacted double self-aligned bipolar junction transistor by selective epitaxial growth

A novel single crystal silicon contacted double self-aligned transistor (DST) structure, that uses vertical seed epitaxial lateral overgrowth (VELO) is demonstrated. When scaled to smaller dimensions, this structure can provide an 18% improvement in ECL circuit speed.

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Hauptverfasser:	Subramanian, C.K., Neudeck, G.W.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Circuits Contacts Crystallization Epitaxial growth Fabrication Laboratories Parasitic capacitance Research and development Silicon Transistors
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creator	Subramanian, C.K. Neudeck, G.W.
description	A novel single crystal silicon contacted double self-aligned transistor (DST) structure, that uses vertical seed epitaxial lateral overgrowth (VELO) is demonstrated. When scaled to smaller dimensions, this structure can provide an 18% improvement in ECL circuit speed.
doi_str_mv	10.1109/BIPOL.1994.587861
format	Conference Proceeding
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When scaled to smaller dimensions, this structure can provide an 18% improvement in ECL circuit speed.</description><subject>Circuits</subject><subject>Contacts</subject><subject>Crystallization</subject><subject>Epitaxial growth</subject><subject>Fabrication</subject><subject>Laboratories</subject><subject>Parasitic capacitance</subject><subject>Research and development</subject><subject>Silicon</subject><subject>Transistors</subject><isbn>078031316X</isbn><isbn>0780321170</isbn><isbn>9780780321175</isbn><isbn>9780780313163</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1994</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkF9LwzAUxQMiqHMfQJ_yBVqTJml6H3X4ZzCYoIJvI01vZ0ZsS5Kp-_ZG5oHLgcOPA_cQcsVZyTmDm7vl83pVcgBZqkY3NT8hF0w3THDB6_czMo9xx7KkUrJi52R4ccPWI7XhEJPxNDrv7DjQfMnYhB3txn2bgYi-L4x32yFnrZtGbwLd7QebXMZTMEN0MY2Btoc_FnP-hRQnl8yPy8XbMH6nj0ty2hsfcf7vM_L2cP-6eCpW68fl4nZVOM5kKgSikZ2AutLQAFjoRA0SsNNMqFZqsK0yPbRV3UmGCnT-ECpteqsMs30lZuT62OsQcTMF92nCYXNcRPwCjjpZ8Q</recordid><startdate>1994</startdate><enddate>1994</enddate><creator>Subramanian, C.K.</creator><creator>Neudeck, G.W.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1994</creationdate><title>Single crystal silicon contacted double self-aligned bipolar junction transistor by selective epitaxial growth</title><author>Subramanian, C.K. ; Neudeck, G.W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-3eea4d396279899c9d36949ed7035b479cb5af9b26d40e597780927afc5a0cf23</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Circuits</topic><topic>Contacts</topic><topic>Crystallization</topic><topic>Epitaxial growth</topic><topic>Fabrication</topic><topic>Laboratories</topic><topic>Parasitic capacitance</topic><topic>Research and development</topic><topic>Silicon</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Subramanian, C.K.</creatorcontrib><creatorcontrib>Neudeck, G.W.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Subramanian, C.K.</au><au>Neudeck, G.W.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Single crystal silicon contacted double self-aligned bipolar junction transistor by selective epitaxial growth</atitle><btitle>Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting</btitle><stitle>BIPOL</stitle><date>1994</date><risdate>1994</risdate><spage>68</spage><epage>71</epage><pages>68-71</pages><isbn>078031316X</isbn><isbn>0780321170</isbn><isbn>9780780321175</isbn><isbn>9780780313163</isbn><abstract>A novel single crystal silicon contacted double self-aligned transistor (DST) structure, that uses vertical seed epitaxial lateral overgrowth (VELO) is demonstrated. When scaled to smaller dimensions, this structure can provide an 18% improvement in ECL circuit speed.</abstract><pub>IEEE</pub><doi>10.1109/BIPOL.1994.587861</doi><tpages>4</tpages></addata></record>
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identifier	ISBN: 078031316X
ispartof	Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 1994, p.68-71
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language	eng
recordid	cdi_ieee_primary_587861
source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Circuits Contacts Crystallization Epitaxial growth Fabrication Laboratories Parasitic capacitance Research and development Silicon Transistors
title	Single crystal silicon contacted double self-aligned bipolar junction transistor by selective epitaxial growth
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