Single crystal silicon contacted double self-aligned bipolar junction transistor by selective epitaxial growth

Single crystal silicon contacted double self-aligned bipolar junction transistor by selective epitaxial growth

A novel single crystal silicon contacted double self-aligned transistor (DST) structure, that uses vertical seed epitaxial lateral overgrowth (VELO) is demonstrated. When scaled to smaller dimensions, this structure can provide an 18% improvement in ECL circuit speed.

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Bibliographische Detailangaben
Hauptverfasser: Subramanian, C.K., Neudeck, G.W.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuits
Contacts
Crystallization
Epitaxial growth
Fabrication
Laboratories
Parasitic capacitance
Research and development
Silicon
Transistors
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Beschreibung
Zusammenfassung:A novel single crystal silicon contacted double self-aligned transistor (DST) structure, that uses vertical seed epitaxial lateral overgrowth (VELO) is demonstrated. When scaled to smaller dimensions, this structure can provide an 18% improvement in ECL circuit speed.
DOI:10.1109/BIPOL.1994.587861