Reduction of hybrid silicon laser thermal impedance using Poly Si thermal shunts

Reduction of hybrid silicon laser thermal impedance using Poly Si thermal shunts

We present a hybrid silicon evanescent laser that uses poly-silicon thermal shunts to reduce the device thermal impedance from 41.5 to 33.5 deg. C/W.

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Bibliographische Detailangaben
Hauptverfasser: Sysak, M N, Park, H, Fang, A W, Raday, O, Bowers, J E, Jones, R
Format: Tagungsbericht
Sprache:eng
Schlagworte:
(140.0140) Lasers and laser optics
(230.0230) Optical devices
(250.0250) Optoelectronics
Conductivity
Impedance
Laser mode locking
Silicon
Temperature measurement
Thermal conductivity
Waveguide lasers
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Beschreibung
Zusammenfassung:We present a hybrid silicon evanescent laser that uses poly-silicon thermal shunts to reduce the device thermal impedance from 41.5 to 33.5 deg. C/W.
DOI:10.1364/ofc.2011.owz6