New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETs

New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETs

We report the demonstration of a new contact resistance reduction technology for Si:C S/D using Tellurium (Te) implant and segregation. When integrated in a novel process flow featuring a single-metal platinum-based silicide (PtSi) contact technology, independent control of SBH in n- and p-FinFETs c...

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Bibliographische Detailangaben
Hauptverfasser: Shao-Ming Koh, Kong, Eugene Yu Jin, Bin Liu, Chee-Mang Ng, Pan Liu, Zhi-Qiang Mo, Kam-Chew Leong, Samudra, Ganesh S, Yee-Chia Yeo
Format: Tagungsbericht
Sprache:eng
Schlagworte:
FinFETs
Implants
Logic gates
Metals
Silicidation
Silicides
Silicon
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Beschreibung
Zusammenfassung:We report the demonstration of a new contact resistance reduction technology for Si:C S/D using Tellurium (Te) implant and segregation. When integrated in a novel process flow featuring a single-metal platinum-based silicide (PtSi) contact technology, independent control of SBH in n- and p-FinFETs can be achieved. A low electron SBH of 120 meV is attained for n-FinFETs with Si:C S/D using PtSi and Te segregation, giving an I Dsat enhancement of 22% in comparison with controls without Te implant.
ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.2011.5872238