InGaAs quantum well vertical-cavity surface-emitting lasers integration onto silicon substrates

Vertical-cavity surface-emitting lasers have been integrated onto silicon substrates using a new substrate removal process and low temperature PdGe contacts. A reduction in threshold current of 30% was observed for devices integrated onto silicon.

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Bibliographische Detailangaben
Hauptverfasser:	Mathine, D.L., Fathollahnejad, H., Droopad, R., Daryanani, S., Maracas, G.N.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Gallium arsenide Indium gallium arsenide Optical arrays Optical surface waves Quantum well lasers Silicon Surface emitting lasers Thermal conductivity Threshold current Vertical cavity surface emitting lasers
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Beschreibung
Zusammenfassung:	Vertical-cavity surface-emitting lasers have been integrated onto silicon substrates using a new substrate removal process and low temperature PdGe contacts. A reduction in threshold current of 30% was observed for devices integrated onto silicon.
DOI:	10.1109/LEOS.1994.587003