Angled-facet high-power diffraction-limited tapered semiconductor amplifier
Summary form only given. Tapered semiconductor amplifiers have successfully demonstrated high-power diffraction-limited emission. So far, all these amplifiers had normal incidence facets coated with antireflection (AR) coating to prevent self-oscillation. In this work, an angled-facet high-power dif...
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| container_end_page | 400 vol.2 |
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| container_start_page | 399 |
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| container_volume | 2 |
| creator | Yeh, P.S. Lu, C.C. Merritt, S. Heim, P. Cho, S.H. Dauga, C. Fox, S. Wood, C.E.C. Dagenais, M. |
| description | Summary form only given. Tapered semiconductor amplifiers have successfully demonstrated high-power diffraction-limited emission. So far, all these amplifiers had normal incidence facets coated with antireflection (AR) coating to prevent self-oscillation. In this work, an angled-facet high-power diffraction-limited tapered GaAs-AlGaAs QW semiconductor amplifier operating at 809-nm was realized. Due to the angled facet structure, any residual reflection from the facets is fed back at a small angle with the signal propagation direction. |
| doi_str_mv | 10.1109/LEOS.1994.586635 |
| format | Conference Proceeding |
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Tapered semiconductor amplifiers have successfully demonstrated high-power diffraction-limited emission. So far, all these amplifiers had normal incidence facets coated with antireflection (AR) coating to prevent self-oscillation. In this work, an angled-facet high-power diffraction-limited tapered GaAs-AlGaAs QW semiconductor amplifier operating at 809-nm was realized. Due to the angled facet structure, any residual reflection from the facets is fed back at a small angle with the signal propagation direction.</description><identifier>ISBN: 0780314700</identifier><identifier>ISBN: 9780780314702</identifier><identifier>DOI: 10.1109/LEOS.1994.586635</identifier><language>eng</language><publisher>IEEE</publisher><subject>Coatings ; Diffraction ; Educational institutions ; High power amplifiers ; Optical amplifiers ; Optical propagation ; Power amplifiers ; Power generation ; Pulse amplifiers ; Semiconductor optical amplifiers</subject><ispartof>Proceedings of LEOS'94, 1994, Vol.2, p.399-400 vol.2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/586635$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/586635$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yeh, P.S.</creatorcontrib><creatorcontrib>Lu, C.C.</creatorcontrib><creatorcontrib>Merritt, S.</creatorcontrib><creatorcontrib>Heim, P.</creatorcontrib><creatorcontrib>Cho, S.H.</creatorcontrib><creatorcontrib>Dauga, C.</creatorcontrib><creatorcontrib>Fox, S.</creatorcontrib><creatorcontrib>Wood, C.E.C.</creatorcontrib><creatorcontrib>Dagenais, M.</creatorcontrib><title>Angled-facet high-power diffraction-limited tapered semiconductor amplifier</title><title>Proceedings of LEOS'94</title><addtitle>LEOS</addtitle><description>Summary form only given. Tapered semiconductor amplifiers have successfully demonstrated high-power diffraction-limited emission. So far, all these amplifiers had normal incidence facets coated with antireflection (AR) coating to prevent self-oscillation. In this work, an angled-facet high-power diffraction-limited tapered GaAs-AlGaAs QW semiconductor amplifier operating at 809-nm was realized. Due to the angled facet structure, any residual reflection from the facets is fed back at a small angle with the signal propagation direction.</description><subject>Coatings</subject><subject>Diffraction</subject><subject>Educational institutions</subject><subject>High power amplifiers</subject><subject>Optical amplifiers</subject><subject>Optical propagation</subject><subject>Power amplifiers</subject><subject>Power generation</subject><subject>Pulse amplifiers</subject><subject>Semiconductor optical amplifiers</subject><isbn>0780314700</isbn><isbn>9780780314702</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1994</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jrsKwjAUQAMi-OouTv2B1oQ-M4pUBAUH3UtIbtoraRvSiPj3Cjp7ljOc5RCyZjRmjPLtubpcY8Z5GmdlnifZhCxoUdKEpQWlMxKM451-SDPKWTEnp13fGFCRFhJ82GLTRnZ4ggsVau2E9Dj0kcEOPajQCwvu4xE6lEOvHtIPLhSdNagR3IpMtTAjBD8vyeZQ3fbHCAGgtg474V71dyv5G982ND0k</recordid><startdate>1994</startdate><enddate>1994</enddate><creator>Yeh, P.S.</creator><creator>Lu, C.C.</creator><creator>Merritt, S.</creator><creator>Heim, P.</creator><creator>Cho, S.H.</creator><creator>Dauga, C.</creator><creator>Fox, S.</creator><creator>Wood, C.E.C.</creator><creator>Dagenais, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1994</creationdate><title>Angled-facet high-power diffraction-limited tapered semiconductor amplifier</title><author>Yeh, P.S. ; Lu, C.C. ; Merritt, S. ; Heim, P. ; Cho, S.H. ; Dauga, C. ; Fox, S. ; Wood, C.E.C. ; Dagenais, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_5866353</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Coatings</topic><topic>Diffraction</topic><topic>Educational institutions</topic><topic>High power amplifiers</topic><topic>Optical amplifiers</topic><topic>Optical propagation</topic><topic>Power amplifiers</topic><topic>Power generation</topic><topic>Pulse amplifiers</topic><topic>Semiconductor optical amplifiers</topic><toplevel>online_resources</toplevel><creatorcontrib>Yeh, P.S.</creatorcontrib><creatorcontrib>Lu, C.C.</creatorcontrib><creatorcontrib>Merritt, S.</creatorcontrib><creatorcontrib>Heim, P.</creatorcontrib><creatorcontrib>Cho, S.H.</creatorcontrib><creatorcontrib>Dauga, C.</creatorcontrib><creatorcontrib>Fox, S.</creatorcontrib><creatorcontrib>Wood, C.E.C.</creatorcontrib><creatorcontrib>Dagenais, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yeh, P.S.</au><au>Lu, C.C.</au><au>Merritt, S.</au><au>Heim, P.</au><au>Cho, S.H.</au><au>Dauga, C.</au><au>Fox, S.</au><au>Wood, C.E.C.</au><au>Dagenais, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Angled-facet high-power diffraction-limited tapered semiconductor amplifier</atitle><btitle>Proceedings of LEOS'94</btitle><stitle>LEOS</stitle><date>1994</date><risdate>1994</risdate><volume>2</volume><spage>399</spage><epage>400 vol.2</epage><pages>399-400 vol.2</pages><isbn>0780314700</isbn><isbn>9780780314702</isbn><abstract>Summary form only given. Tapered semiconductor amplifiers have successfully demonstrated high-power diffraction-limited emission. So far, all these amplifiers had normal incidence facets coated with antireflection (AR) coating to prevent self-oscillation. In this work, an angled-facet high-power diffraction-limited tapered GaAs-AlGaAs QW semiconductor amplifier operating at 809-nm was realized. Due to the angled facet structure, any residual reflection from the facets is fed back at a small angle with the signal propagation direction.</abstract><pub>IEEE</pub><doi>10.1109/LEOS.1994.586635</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 0780314700 |
| ispartof | Proceedings of LEOS'94, 1994, Vol.2, p.399-400 vol.2 |
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| language | eng |
| recordid | cdi_ieee_primary_586635 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Coatings Diffraction Educational institutions High power amplifiers Optical amplifiers Optical propagation Power amplifiers Power generation Pulse amplifiers Semiconductor optical amplifiers |
| title | Angled-facet high-power diffraction-limited tapered semiconductor amplifier |
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