Angled-facet high-power diffraction-limited tapered semiconductor amplifier

Angled-facet high-power diffraction-limited tapered semiconductor amplifier

Summary form only given. Tapered semiconductor amplifiers have successfully demonstrated high-power diffraction-limited emission. So far, all these amplifiers had normal incidence facets coated with antireflection (AR) coating to prevent self-oscillation. In this work, an angled-facet high-power dif...

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Hauptverfasser: Yeh, P.S., Lu, C.C., Merritt, S., Heim, P., Cho, S.H., Dauga, C., Fox, S., Wood, C.E.C., Dagenais, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Coatings
Diffraction
Educational institutions
High power amplifiers
Optical amplifiers
Optical propagation
Power amplifiers
Power generation
Pulse amplifiers
Semiconductor optical amplifiers
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Beschreibung
Zusammenfassung:Summary form only given. Tapered semiconductor amplifiers have successfully demonstrated high-power diffraction-limited emission. So far, all these amplifiers had normal incidence facets coated with antireflection (AR) coating to prevent self-oscillation. In this work, an angled-facet high-power diffraction-limited tapered GaAs-AlGaAs QW semiconductor amplifier operating at 809-nm was realized. Due to the angled facet structure, any residual reflection from the facets is fed back at a small angle with the signal propagation direction.
DOI:10.1109/LEOS.1994.586635