A low loss/highly rugged IGBT-generation based on a self aligned process with double implanted n/n/sup +/-emitter

A low loss/highly rugged IGBT-generation based on a self aligned process with double implanted n/n/sup +/-emitter

A new 1200 V-IGBT chip is presented which has an optimized planar cell structure for lowest on-state voltage, but that nevertheless guarantees a very high degree of ruggedness. The key point for these features is a new self aligned process concept with a double implanted submicron emitter structure,...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Laska, T., Porst, A., Brunner, H., Kiffe, W.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Area measurement
Circuits
Insulated gate bipolar transistors
Inverters
Latches
MOSFETs
Motor drives
Power generation
Transconductance
Voltage
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Beschreibung
Zusammenfassung:A new 1200 V-IGBT chip is presented which has an optimized planar cell structure for lowest on-state voltage, but that nevertheless guarantees a very high degree of ruggedness. The key point for these features is a new self aligned process concept with a double implanted submicron emitter structure, which will be the basis also for a lower voltage IGBT (600 V) as well as for high voltage IGBTs (1600 V and higher).
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.1994.583694