Pulsed laser-induced transient currents in bulk and silicon-on-insulator FinFETs

Pulsed laser-induced transient currents in bulk and silicon-on-insulator FinFETs

Pulsed laser-induced current transient experiments are used to understand the mechanisms of single-event effects in bulk and fully depleted silicon-on-insulator p-channel FinFETs. The drain current transients are significantly larger in the bulk FinFETs than in the SOI devices. Bulk FinFETs collecte...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: El-Mamouni, F, Zhang, E X, Schrimpf, R D, Reed, R A, Galloway, K F, McMorrow, D, Simoen, E, Claeys, C, Cristoloveanu, S, Xiong, W
Format: Tagungsbericht
Sprache:eng
Schlagworte:
charge collection
charge generated
fin
FinFET
FinFETs
Laser beams
laser energy
Lasers
Logic gates
multi-gate transistors
Silicon on insulator technology
Silicon-on-insulator (SOI)
single event effects (SEEs)
single photon absorption (SPA)
Substrates
Transient analysis
transient measurements
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Pulsed laser-induced current transient experiments are used to understand the mechanisms of single-event effects in bulk and fully depleted silicon-on-insulator p-channel FinFETs. The drain current transients are significantly larger in the bulk FinFETs than in the SOI devices. Bulk FinFETs collected 270 times more charge than SOI FinFETs. 98% of the charge collected in the bulk FinFETs is generated in the substrate. The rest of the collected charge (2%) is generated in the fins. Most of the collected charge in the SOI FinFets is generated in the fins.
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2011.5784597