Negative bias temperature instability "multi-mode" compact model based on threshold voltage and mobility degradation

In this paper we have developed a model to obtain drain current (ID) degradation at all transistor operating modes (linear, saturation and sub-threshold) during NBTI stress based on threshold voltage (VT) and mobility (μ) degradation. This model provides a compact way to comprehend NBTI induced drai...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Varghese, D, Higgins, R, Dunn, S, Krishnan, A T, Reddy, V, Krishnan, S
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	compact model Current measurement Degradation Logic gates mobility degradation MOSFETs Negative bias temperature instability Stress Stress measurement threshold-voltage degradation
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