Reliability monitoring ring oscillator structures for isolated/combined NBTI and PBTI measurement in high-k metal gate technologies
Ring oscillator (RO) structures that separate NBTI and PBTI effects are implemented in a high-k metal gate technology. The measurement results clearly show significant RO frequency degradation from PBTI as well as NBTI. For comparison, RO structures with the same principle are also implemented in a...
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Format: | Tagungsbericht |
Sprache: | eng ; jpn |
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Zusammenfassung: | Ring oscillator (RO) structures that separate NBTI and PBTI effects are implemented in a high-k metal gate technology. The measurement results clearly show significant RO frequency degradation from PBTI as well as NBTI. For comparison, RO structures with the same principle are also implemented in a SiO 2 /poly-gate technology, where PBTI is negligible. Experimental results show noticeable frequency degradation under NBTI-only stress mode but negligible degradation under PBTI-only mode, which illustrates the validity of the proposed principle and structures. |
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ISSN: | 1541-7026 1938-1891 |
DOI: | 10.1109/IRPS.2011.5784450 |