Design and characterization of a highly linear 3 GHz GaN HEMT amplifier

Design and characterization of a highly linear 3 GHz GaN HEMT amplifier

In this paper a highly linear amplifier using an in-house gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented. A 3 dB bandwidth of 2.7-3.6 GHz with a maximum gain of 18 dB was measured. The output third-order intercept point (OIP3) was measured to 39 dBm with a max...

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Hauptverfasser: Chehrenegar, P, Axelsson, O, Grahn, J, Rorsman, N, Felbinger, J G, Andersson, K
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Frequency measurement
Gain
Gallium nitride
GaN HEMT transistor
HEMTs
high dynamic range
Linearity
MMICs
Noise
Noise measurement
OIP3
Power consumption
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Zusammenfassung:In this paper a highly linear amplifier using an in-house gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented. A 3 dB bandwidth of 2.7-3.6 GHz with a maximum gain of 18 dB was measured. The output third-order intercept point (OIP3) was measured to 39 dBm with a maximum power consumption of 2.1 W. With a reduction of power consumption to 1 W the noise figure was improved by 0.6 dB while the OIP3 was degraded 3 dB.
DOI:10.1109/INMMIC.2011.5773310