Characterization and impedance matching of new high sensitive planar Schottky detector diodes

New high sensitive zero-bias Schottky detector diodes with low junction capacitance and differential resistance are characterized by applying DC and S-parameter measurements in W-band. The extracted parameters provide an accurate RF model for circuit simulations to design and realize an impedance ma...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Hoefle, M, Schneider, K, Penirschke, A, Cojocari, O, Jakoby, R
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitance Characterization Detectors Electrical resistance measurement Impedance matching Resistance Schottky diodes W-band zero-bias Schottky diode
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	New high sensitive zero-bias Schottky detector diodes with low junction capacitance and differential resistance are characterized by applying DC and S-parameter measurements in W-band. The extracted parameters provide an accurate RF model for circuit simulations to design and realize an impedance matching network at 90 GHz to avoid standing waves in a diode detector as an essential part of high sensitive direct detection receivers.
ISSN:	2167-8022 2167-8030