A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking

A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking

Mobile DRAM is widely employed in portable electronic devices due to its fea ture of low power consumption. Recently, as the market trend renders integra tion of various features in one chip, mobile DRAM is required to have not only low power consumption but also high capacity and high speed. To att...

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Hauptverfasser: Jung-Sik Kim, Chi Sung Oh, Hocheol Lee, Donghyuk Lee, Hyong-Ryol Hwang, Sooman Hwang, Byongwook Na, Joungwook Moon, Jin-Guk Kim, Hanna Park, Jang-Woo Ryu, Kiwon Park, Sang-Kyu Kang, So-Young Kim, Hoyoung Kim, Jong-Min Bang, Hyunyoon Cho, Minsoo Jang, Cheolmin Han, Jung-Bae Lee, Kyehyun Kyung, Joo-Sun Choi, Young-Hyun Jun
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Arrays
Clocks
Mobile communication
Pins
Random access memory
Registers
Timing
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Beschreibung
Zusammenfassung:Mobile DRAM is widely employed in portable electronic devices due to its fea ture of low power consumption. Recently, as the market trend renders integra tion of various features in one chip, mobile DRAM is required to have not only low power consumption but also high capacity and high speed. To attain these goals in mobile DRAM, we designed a 1Gb single data rate (SDR) Wide-I/O mobile SDRAM with 4 channels and 512 DQ pins, featuring 12.8GB/S data band width.
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.2011.5746413