Low power, high linearity wideband receiver front-end for LTE application
This paper presents a low power wideband receiver front-end implemented in 0.18 um CMOS technology for LTE application. The front-end includes a low-noise amplifier and a quadrature passive current commutating mixer. The inductive peaking LNA is designed using common gate topology for wideband match...
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| creator | Hoai-Nam Nguyen Viet-Hoang Le Ki-Uk Gwak Jeong-Yeol Bae Seok-Kyun Han Sang-Gug Lee |
| description | This paper presents a low power wideband receiver front-end implemented in 0.18 um CMOS technology for LTE application. The front-end includes a low-noise amplifier and a quadrature passive current commutating mixer. The inductive peaking LNA is designed using common gate topology for wideband matching with low power consumption. A noise cancellation technique is adopted for the LNA to achieve NF lower than 3dB. A variable gain transconductance amplifier is realized to expanse receiver dynamic range. The tranconductance cell with dynamic bias is designed for high linearity mixer performance. The receiver front-end operates from 0.7 to 2.7 GHz covering all frequency band of 3GPP LTE standard. The front-end shows 38 dB voltage conversion gain, 4.5 dB DSB NF, -10 dBm in-band IIP3 and -6 dBm out-of-band IIP3 while consuming 15 mA from a 1.8 V supply. |
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The front-end includes a low-noise amplifier and a quadrature passive current commutating mixer. The inductive peaking LNA is designed using common gate topology for wideband matching with low power consumption. A noise cancellation technique is adopted for the LNA to achieve NF lower than 3dB. A variable gain transconductance amplifier is realized to expanse receiver dynamic range. The tranconductance cell with dynamic bias is designed for high linearity mixer performance. The receiver front-end operates from 0.7 to 2.7 GHz covering all frequency band of 3GPP LTE standard. 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The front-end includes a low-noise amplifier and a quadrature passive current commutating mixer. The inductive peaking LNA is designed using common gate topology for wideband matching with low power consumption. A noise cancellation technique is adopted for the LNA to achieve NF lower than 3dB. A variable gain transconductance amplifier is realized to expanse receiver dynamic range. The tranconductance cell with dynamic bias is designed for high linearity mixer performance. The receiver front-end operates from 0.7 to 2.7 GHz covering all frequency band of 3GPP LTE standard. The front-end shows 38 dB voltage conversion gain, 4.5 dB DSB NF, -10 dBm in-band IIP3 and -6 dBm out-of-band IIP3 while consuming 15 mA from a 1.8 V supply.</abstract><pub>IEEE</pub><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 1738-9445 |
| ispartof | 13th International Conference on Advanced Communication Technology (ICACT2011), 2011, p.640-643 |
| issn | 1738-9445 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | 4G wireless communications CMOS receiver front-end Gain low power LTE Mixers Noise measurement Radio frequency Receivers SAW-less receiver Wideband |
| title | Low power, high linearity wideband receiver front-end for LTE application |
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