Characterization of SrTiO3-based MIM capacitors grown by using different precursors and growth temperatures

SrTiO 3 -based MIM capacitors were electrically characterized. Strontium titanate thin films were grown by atomic layer deposition using Sr( i Pr 3 Cp) 2 and (CpMe 5 )Ti(OMe) 3 as strontium and titanium precursors and H 2 O and O 3 as oxygen precursors. The temperatures used to grow the high-k films were 250 and 300 °C. The films were amorphous in the as-deposited state. The lowest CET values were achieved in the films grown using ozone at 300 °C. Leakage current is lower when samples were grown at 250 °C and when were grown using O 3 as oxygen precursor.