Development of Quantum Hall Array Resistance Standards at NMIJ

A quantum Hall array resistance standard (QHARS) device with a nominal value close to 10 kΩ on the i = 2 plateau has been developed on a GaAs/AlGaAs heterosubstrate. This QHARS device consists of 266 Hall bar elements, and its nominal value has only 0.0342 × 10 -6 difference based on R K-90 ( = 25 8...

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Veröffentlicht in:	IEEE transactions on instrumentation and measurement 2011-07, Vol.60 (7), p.2590-2595
Hauptverfasser:	Oe, T, Matsuhiro, K, Itatani, T, Gorwadkar, S, Kiryu, S, Kaneko, N
Format:	Artikel
Sprache:	eng
Schlagworte:	10- hbox{k}\Omega QHARS Aluminum gallium arsenides Arrays DC resistance standards Devices Electrical resistance measurement Gallium arsenide Gallium arsenides Halls Instrumentation Insulation photosensitive polyimide (PI) quantized Hall resistance (QHR) quantum Hall array resistance standard (QHARS) quantum Hall effect (QHE) Resistance Resistors Wiring
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Beschreibung
Zusammenfassung:	A quantum Hall array resistance standard (QHARS) device with a nominal value close to 10 kΩ on the i = 2 plateau has been developed on a GaAs/AlGaAs heterosubstrate. This QHARS device consists of 266 Hall bar elements, and its nominal value has only 0.0342 × 10 -6 difference based on R K-90 ( = 25 812.807 Ω) from an integer value of 10 4 . As a result of comparison measurements with the conventional Quantized Hall Resistance Standard via the 100- Ω standard resistor, the value of the QHARS device agrees with its nominal value within 3.5 × 10 -8 .
ISSN:	0018-9456 1557-9662
DOI:	10.1109/TIM.2010.2100630