Wafer-level hermetic packaging technology for MEMS using anodically-bondable LTCC wafer

This paper describes a versatile and reliable wafer-level hermetic packaging technology using an anodically-bondable low temperature cofired ceramic (LTCC) wafer, in which electrical feedthroughs and passive components can be embedded. The hermeticity of vacuum-sealed cavities was confirmed after 30...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Tanaka, S, Matsuzaki, S, Mohri, M, Okada, A, Fukushi, H, Esashi, M
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This paper describes a versatile and reliable wafer-level hermetic packaging technology using an anodically-bondable low temperature cofired ceramic (LTCC) wafer, in which electrical feedthroughs and passive components can be embedded. The hermeticity of vacuum-sealed cavities was confirmed after 3000 cycles of heat shock (-40°C/+150°C, 30 min/30 min) by diaphragm method. The width of seal rings necessary for hermetic sealing of saw-diced chips is 0.1 mm or less. Electrical connection between MEMS on a Si wafer and feedthroughs in the LTCC wafer was established using Sn-containing metal stack simultaneously with anodic bonding. The developed wafer-level hermetic packaging technology is ready for practical applications.
ISSN:1084-6999
DOI:10.1109/MEMSYS.2011.5734440