MEMS-based thick film PZT vibrational energy harvester

MEMS-based thick film PZT vibrational energy harvester

We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using a mechanica...

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Bibliographische Detailangaben
Hauptverfasser: Lei, A, Xu, R, Thyssen, A, Stoot, A C, Christiansen, T L, Hansen, K, Lou-Moller, R, Thomsen, E V, Birkelund, K
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Acceleration
Energy harvesting
Fabrication
Resonant frequency
Silicon
Thick films
Vibrations
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Beschreibung
Zusammenfassung:We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using a mechanical front side protection of an SOI wafer with screen printed PZT thick film. The fabricated harvester device produces 14.0 μW with an optimal resistive load of 100 kΩ from 1g (g=9.81 m s-2) input acceleration at its resonant frequency of 235 Hz.
ISSN:1084-6999
DOI:10.1109/MEMSYS.2011.5734377