A new design for tapered-geometry high-power semiconductor optical sources

A new design for tapered-geometry high-power semiconductor optical sources

A compact model for tapered-geometry optical sources has been developed using perturbation analysis to evaluate carrier-induced changes to modal propagation constants. Results for novel, parabolically-tapered devices demonstrate their merit as high-power semiconductor laser sources.

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Bibliographische Detailangaben
Hauptverfasser: Brooks, N.S., Sarma, J., Middlemast, I.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Geometrical optics
Laser modes
Laser transitions
Optical amplifiers
Optical design
Optical refraction
Optical variables control
Propagation constant
Semiconductor lasers
Shape
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Beschreibung
Zusammenfassung:A compact model for tapered-geometry optical sources has been developed using perturbation analysis to evaluate carrier-induced changes to modal propagation constants. Results for novel, parabolically-tapered devices demonstrate their merit as high-power semiconductor laser sources.
DOI:10.1109/LEOS.1996.571625