Selective area bandgap control during MBE growth of InGaAs/InAlAs QWs for optoelectronic device applications

Selective area bandgap control during MBE growth of InGaAs/InAlAs QWs for optoelectronic device applications

Semiconductor lasers emitting at 1.3 /spl mu/m and 1.55 /spl mu/m wavelengths are of particular interest because of their application in optical fibre communication systems. In this work, we investigate for the first time the process of indium migration during the growth of InGaAs-InAlAs single quan...

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Hauptverfasser: Guptal, V.K., Williams, R.L., Wasilewski, Z.R., Dion, M., Aers, G.C., Norman, C.E.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Communication system control
Fiber lasers
Indium compounds
Indium gallium arsenide
Indium phosphide
Optical fiber communication
Photonic band gap
Quantum well lasers
Semiconductor lasers
Substrates
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Zusammenfassung:Semiconductor lasers emitting at 1.3 /spl mu/m and 1.55 /spl mu/m wavelengths are of particular interest because of their application in optical fibre communication systems. In this work, we investigate for the first time the process of indium migration during the growth of InGaAs-InAlAs single quantum wells grown by MBE on patterned InP substrates for the fabrication of long wavelength integrated optoelectronic devices.
DOI:10.1109/LEOS.1996.571583