Effects of Positive and Negative Stresses on III-V MOSFETs With \hbox\hbox Gate Dielectric

We subjected III-V InGaAs MOSFETs to positive and negative gate stresses. The stress polarity strongly affects the degradation kinetics of the gate current. Positive stress features a remarkable increase of the gate current, a net negative trapped charge, a large telegraphic noise, and soft breakdown, before the occurrence of the final catastrophic breakdown. Negative stress features only positive trapped charge until the hard breakdown.