The influence of the growth temperature on the doping characteristics of P-GaP layers in AlGaInP red LED

The doping characteristics of P-GaP layer in AlGaInP red LED has been studied, by changing the low pressure metal organic chemical vapor deposition (LP-MOCVD) system's growth temperature. Several epitaxial samples, which grown at different temperatures of LP-MOCVD, have been tested by ECV syste...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Shaojun Luo, Jun Deng, Jianjun Li, Linchun Gao, Rui Chen, Jun Han
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Doping ECV LED Light emitting diodes MOCVD Ohmic contacts P-GaP Substrates Surface morphology Temperature distribution
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!