The influence of the growth temperature on the doping characteristics of P-GaP layers in AlGaInP red LED

The influence of the growth temperature on the doping characteristics of P-GaP layers in AlGaInP red LED

The doping characteristics of P-GaP layer in AlGaInP red LED has been studied, by changing the low pressure metal organic chemical vapor deposition (LP-MOCVD) system's growth temperature. Several epitaxial samples, which grown at different temperatures of LP-MOCVD, have been tested by ECV syste...

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Bibliographische Detailangaben
Hauptverfasser: Shaojun Luo, Jun Deng, Jianjun Li, Linchun Gao, Rui Chen, Jun Han
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Doping
ECV
LED
Light emitting diodes
MOCVD
Ohmic contacts
P-GaP
Substrates
Surface morphology
Temperature distribution
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Beschreibung
Zusammenfassung:The doping characteristics of P-GaP layer in AlGaInP red LED has been studied, by changing the low pressure metal organic chemical vapor deposition (LP-MOCVD) system's growth temperature. Several epitaxial samples, which grown at different temperatures of LP-MOCVD, have been tested by ECV system. The results have been shown,that the doping density and the surface of GaP layer and the characteristics of the LED changed with the growth temperature of GaP layers. This experience can be used for the fabrication of high-performance AlGaInP red LED.
DOI:10.1109/AOM.2010.5713514