The influence of native point defects on the performance of diodes built on neutron-irradiated semi-insulating GaAs

Irradiation of semi-insulating GaAs by fast neutrons results in the creation of arsenic antisite defects. Photoresponse measurements reveal that the carrier lifetime is reduced by the irradiation. The lifetimes scale inversely with the amount of singly ionized arsenic antisites which therefore is th...

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Bibliographische Detailangaben

Hauptverfasser:	Kruger, J., Yan Chin Shih, Liu Xiao, Wang, C.L., Morse, J.D., Rogalla, M., Runge, K., Weber, E.R.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Charge carrier lifetime Cooling Detectors Gallium arsenide Laboratories Neutrons Schottky diodes Silicon Spectroscopy Temperature
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