The influence of native point defects on the performance of diodes built on neutron-irradiated semi-insulating GaAs

The influence of native point defects on the performance of diodes built on neutron-irradiated semi-insulating GaAs

Irradiation of semi-insulating GaAs by fast neutrons results in the creation of arsenic antisite defects. Photoresponse measurements reveal that the carrier lifetime is reduced by the irradiation. The lifetimes scale inversely with the amount of singly ionized arsenic antisites which therefore is th...

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Hauptverfasser: Kruger, J., Yan Chin Shih, Liu Xiao, Wang, C.L., Morse, J.D., Rogalla, M., Runge, K., Weber, E.R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge carrier lifetime
Cooling
Detectors
Gallium arsenide
Laboratories
Neutrons
Schottky diodes
Silicon
Spectroscopy
Temperature
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Zusammenfassung:Irradiation of semi-insulating GaAs by fast neutrons results in the creation of arsenic antisite defects. Photoresponse measurements reveal that the carrier lifetime is reduced by the irradiation. The lifetimes scale inversely with the amount of singly ionized arsenic antisites which therefore is the main carrier trapping center and lifetime killer in irradiated GaAs. The density of charged arsenic antisites also determines the charge collection efficiency of Schottky diodes made of GaAs.
DOI:10.1109/SIM.1996.571116