The influence of native point defects on the performance of diodes built on neutron-irradiated semi-insulating GaAs
Irradiation of semi-insulating GaAs by fast neutrons results in the creation of arsenic antisite defects. Photoresponse measurements reveal that the carrier lifetime is reduced by the irradiation. The lifetimes scale inversely with the amount of singly ionized arsenic antisites which therefore is th...
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| creator | Kruger, J. Yan Chin Shih Liu Xiao Wang, C.L. Morse, J.D. Rogalla, M. Runge, K. Weber, E.R. |
| description | Irradiation of semi-insulating GaAs by fast neutrons results in the creation of arsenic antisite defects. Photoresponse measurements reveal that the carrier lifetime is reduced by the irradiation. The lifetimes scale inversely with the amount of singly ionized arsenic antisites which therefore is the main carrier trapping center and lifetime killer in irradiated GaAs. The density of charged arsenic antisites also determines the charge collection efficiency of Schottky diodes made of GaAs. |
| doi_str_mv | 10.1109/SIM.1996.571116 |
| format | Conference Proceeding |
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Photoresponse measurements reveal that the carrier lifetime is reduced by the irradiation. The lifetimes scale inversely with the amount of singly ionized arsenic antisites which therefore is the main carrier trapping center and lifetime killer in irradiated GaAs. 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Photoresponse measurements reveal that the carrier lifetime is reduced by the irradiation. The lifetimes scale inversely with the amount of singly ionized arsenic antisites which therefore is the main carrier trapping center and lifetime killer in irradiated GaAs. The density of charged arsenic antisites also determines the charge collection efficiency of Schottky diodes made of GaAs.</description><subject>Charge carrier lifetime</subject><subject>Cooling</subject><subject>Detectors</subject><subject>Gallium arsenide</subject><subject>Laboratories</subject><subject>Neutrons</subject><subject>Schottky diodes</subject><subject>Silicon</subject><subject>Spectroscopy</subject><subject>Temperature</subject><isbn>0780331796</isbn><isbn>9780780331792</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1996</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jjFrwzAQhQWlkLbJXMh0f8CuhLEdjSE0bYdOyR6U6JResE9GJxfy7-vSzH3LN7yPx1Pq2ejSGG1fdh-fpbG2KevWGNPcqUfdrnRVmdY2M7UQuegpdb1qrX5Qsv9CIA7diHxCiAHYZfpGGCJxBo8BT1kgMuRJHDCFmHp3Uz1FjwLHkbr8qzCOOUUuKCXnyWX0INhTQSxjN83yGd7cWubqPrhOcHHjk1puX_eb94IQ8TAk6l26Hv7uV_-WP1YASwM</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>Kruger, J.</creator><creator>Yan Chin Shih</creator><creator>Liu Xiao</creator><creator>Wang, C.L.</creator><creator>Morse, J.D.</creator><creator>Rogalla, M.</creator><creator>Runge, K.</creator><creator>Weber, E.R.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1996</creationdate><title>The influence of native point defects on the performance of diodes built on neutron-irradiated semi-insulating GaAs</title><author>Kruger, J. ; Yan Chin Shih ; Liu Xiao ; Wang, C.L. ; Morse, J.D. ; Rogalla, M. ; Runge, K. ; Weber, E.R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_5711163</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Charge carrier lifetime</topic><topic>Cooling</topic><topic>Detectors</topic><topic>Gallium arsenide</topic><topic>Laboratories</topic><topic>Neutrons</topic><topic>Schottky diodes</topic><topic>Silicon</topic><topic>Spectroscopy</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Kruger, J.</creatorcontrib><creatorcontrib>Yan Chin Shih</creatorcontrib><creatorcontrib>Liu Xiao</creatorcontrib><creatorcontrib>Wang, C.L.</creatorcontrib><creatorcontrib>Morse, J.D.</creatorcontrib><creatorcontrib>Rogalla, M.</creatorcontrib><creatorcontrib>Runge, K.</creatorcontrib><creatorcontrib>Weber, E.R.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kruger, J.</au><au>Yan Chin Shih</au><au>Liu Xiao</au><au>Wang, C.L.</au><au>Morse, J.D.</au><au>Rogalla, M.</au><au>Runge, K.</au><au>Weber, E.R.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The influence of native point defects on the performance of diodes built on neutron-irradiated semi-insulating GaAs</atitle><btitle>Proceedings of Semiconducting and Semi-Insulating Materials Conference</btitle><stitle>SIM</stitle><date>1996</date><risdate>1996</risdate><spage>345</spage><epage>348</epage><pages>345-348</pages><isbn>0780331796</isbn><isbn>9780780331792</isbn><abstract>Irradiation of semi-insulating GaAs by fast neutrons results in the creation of arsenic antisite defects. Photoresponse measurements reveal that the carrier lifetime is reduced by the irradiation. The lifetimes scale inversely with the amount of singly ionized arsenic antisites which therefore is the main carrier trapping center and lifetime killer in irradiated GaAs. The density of charged arsenic antisites also determines the charge collection efficiency of Schottky diodes made of GaAs.</abstract><pub>IEEE</pub><doi>10.1109/SIM.1996.571116</doi></addata></record> |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Charge carrier lifetime Cooling Detectors Gallium arsenide Laboratories Neutrons Schottky diodes Silicon Spectroscopy Temperature |
| title | The influence of native point defects on the performance of diodes built on neutron-irradiated semi-insulating GaAs |
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