Investigation of Geometric Effect Impact on SONOS Memory in a NAND Array Structure

Geometric effects on program/erase speeds, endurance, and charge retention of polysilicon-oxide-nitride-oxide-silicon-type memories are investigated with various structures, including Flash cells, capacitors, and NAND array strings of different dimensions. NAND strings with common word-lines or/and...

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Veröffentlicht in:IEEE transactions on semiconductor manufacturing 2011-05, Vol.24 (2), p.315-324
Hauptverfasser: KU, Shaw-Hung, CHEN, Kuan-Fu, LU, Wen-Pin, CHEN, Kuang-Chao, LU, Chih-Yuan, CHONG, Lit-Ho, CHEN, Yin-Jen, YEH, Teng-Hao, LIN, Shang-Wei, HAN, Tzung-Ting, ZOUS, Nian-Kai, HUANG, Ijen, CHEN, Ming-Shiang
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Sprache:eng
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Zusammenfassung:Geometric effects on program/erase speeds, endurance, and charge retention of polysilicon-oxide-nitride-oxide-silicon-type memories are investigated with various structures, including Flash cells, capacitors, and NAND array strings of different dimensions. NAND strings with common word-lines or/and bit-lines were employed to characterize the Lg and W effect on device performance, which builds up the capability to extrapolate the cell properties of various dimensions. For a charge trapping storage device, it suggests that the evaluation carried out on a large-area device always leads to a conclusion more optimistic than the cell inside array of a real product in all aspects. In addition, a numerical model is proposed to elucidate the observed phenomena from a statistical viewpoint.
ISSN:0894-6507
1558-2345
DOI:10.1109/TSM.2011.2111391