Electroluminescence from a-SiNx:H/SiO2 multilayers using lateral carrier injection
We report the observation of photoluminescence (PL) and electroluminescence (EL) from a-SiN x :H/SiO 2 multilayer structures. The luminescence intensity is improved by a thermal annealing process. A new method of effective current injection has been implemented for electrical excitation of these str...
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| creator | Kamyab, L Rusli Yu Ming Bin |
| description | We report the observation of photoluminescence (PL) and electroluminescence (EL) from a-SiN x :H/SiO 2 multilayer structures. The luminescence intensity is improved by a thermal annealing process. A new method of effective current injection has been implemented for electrical excitation of these structures whereby the electric field is applied parallel to the plane of the multilayers. Such structures are promising as Si based light sources for Si optoelectronics technology. |
| doi_str_mv | 10.1109/PGC.2010.5705975 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5705975</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5705975</ieee_id><sourcerecordid>5705975</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-6558e5c60114fca02b6f14960e307a9202810b431d830e7435183db3f1436eb3</originalsourceid><addsrcrecordid>eNpFkE1Lw0AYhFdEUGvvgpf9A2nf_Up2vUmorVCsGO9ls30jWzaJ7CZg_72BFpzLMDA8DEPII4MFY2CWH-tywWFKqgBlCnVF7pnkUhqtmbj-D5zdknlKR5iklM41vyOfq4BuiH0YW99hctg5pE3sW2qzyr__Pm-Wld9x2o5h8MGeMCY6Jt9902AHjDZQZ2P0GKnvjhPJ990DuWlsSDi_-IxUr6uvcpNtd-u38mWbeQNDlk8LULkcGJONs8DrvGHS5IACCms4cM2gloIdtAAspFBMi0MtppLIsRYz8nSmekTc_0Tf2njaXx4Qf0TSTnA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Electroluminescence from a-SiNx:H/SiO2 multilayers using lateral carrier injection</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Kamyab, L ; Rusli ; Yu Ming Bin</creator><creatorcontrib>Kamyab, L ; Rusli ; Yu Ming Bin</creatorcontrib><description>We report the observation of photoluminescence (PL) and electroluminescence (EL) from a-SiN x :H/SiO 2 multilayer structures. The luminescence intensity is improved by a thermal annealing process. A new method of effective current injection has been implemented for electrical excitation of these structures whereby the electric field is applied parallel to the plane of the multilayers. Such structures are promising as Si based light sources for Si optoelectronics technology.</description><identifier>ISBN: 1424498821</identifier><identifier>ISBN: 9781424498826</identifier><identifier>EISBN: 1424498813</identifier><identifier>EISBN: 1424498805</identifier><identifier>EISBN: 9781424498802</identifier><identifier>EISBN: 9781424498819</identifier><identifier>DOI: 10.1109/PGC.2010.5705975</identifier><language>eng</language><publisher>IEEE</publisher><subject>Amorphous silicon ; Annealing ; Electroluminescence ; Nonhomogeneous media ; Wavelength measurement</subject><ispartof>2010 Photonics Global Conference, 2010, p.1-2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5705975$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5705975$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kamyab, L</creatorcontrib><creatorcontrib>Rusli</creatorcontrib><creatorcontrib>Yu Ming Bin</creatorcontrib><title>Electroluminescence from a-SiNx:H/SiO2 multilayers using lateral carrier injection</title><title>2010 Photonics Global Conference</title><addtitle>PGC</addtitle><description>We report the observation of photoluminescence (PL) and electroluminescence (EL) from a-SiN x :H/SiO 2 multilayer structures. The luminescence intensity is improved by a thermal annealing process. A new method of effective current injection has been implemented for electrical excitation of these structures whereby the electric field is applied parallel to the plane of the multilayers. Such structures are promising as Si based light sources for Si optoelectronics technology.</description><subject>Amorphous silicon</subject><subject>Annealing</subject><subject>Electroluminescence</subject><subject>Nonhomogeneous media</subject><subject>Wavelength measurement</subject><isbn>1424498821</isbn><isbn>9781424498826</isbn><isbn>1424498813</isbn><isbn>1424498805</isbn><isbn>9781424498802</isbn><isbn>9781424498819</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFkE1Lw0AYhFdEUGvvgpf9A2nf_Up2vUmorVCsGO9ls30jWzaJ7CZg_72BFpzLMDA8DEPII4MFY2CWH-tywWFKqgBlCnVF7pnkUhqtmbj-D5zdknlKR5iklM41vyOfq4BuiH0YW99hctg5pE3sW2qzyr__Pm-Wld9x2o5h8MGeMCY6Jt9902AHjDZQZ2P0GKnvjhPJ990DuWlsSDi_-IxUr6uvcpNtd-u38mWbeQNDlk8LULkcGJONs8DrvGHS5IACCms4cM2gloIdtAAspFBMi0MtppLIsRYz8nSmekTc_0Tf2njaXx4Qf0TSTnA</recordid><startdate>201012</startdate><enddate>201012</enddate><creator>Kamyab, L</creator><creator>Rusli</creator><creator>Yu Ming Bin</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201012</creationdate><title>Electroluminescence from a-SiNx:H/SiO2 multilayers using lateral carrier injection</title><author>Kamyab, L ; Rusli ; Yu Ming Bin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-6558e5c60114fca02b6f14960e307a9202810b431d830e7435183db3f1436eb3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Amorphous silicon</topic><topic>Annealing</topic><topic>Electroluminescence</topic><topic>Nonhomogeneous media</topic><topic>Wavelength measurement</topic><toplevel>online_resources</toplevel><creatorcontrib>Kamyab, L</creatorcontrib><creatorcontrib>Rusli</creatorcontrib><creatorcontrib>Yu Ming Bin</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kamyab, L</au><au>Rusli</au><au>Yu Ming Bin</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Electroluminescence from a-SiNx:H/SiO2 multilayers using lateral carrier injection</atitle><btitle>2010 Photonics Global Conference</btitle><stitle>PGC</stitle><date>2010-12</date><risdate>2010</risdate><spage>1</spage><epage>2</epage><pages>1-2</pages><isbn>1424498821</isbn><isbn>9781424498826</isbn><eisbn>1424498813</eisbn><eisbn>1424498805</eisbn><eisbn>9781424498802</eisbn><eisbn>9781424498819</eisbn><abstract>We report the observation of photoluminescence (PL) and electroluminescence (EL) from a-SiN x :H/SiO 2 multilayer structures. The luminescence intensity is improved by a thermal annealing process. A new method of effective current injection has been implemented for electrical excitation of these structures whereby the electric field is applied parallel to the plane of the multilayers. Such structures are promising as Si based light sources for Si optoelectronics technology.</abstract><pub>IEEE</pub><doi>10.1109/PGC.2010.5705975</doi><tpages>2</tpages></addata></record> |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Amorphous silicon Annealing Electroluminescence Nonhomogeneous media Wavelength measurement |
| title | Electroluminescence from a-SiNx:H/SiO2 multilayers using lateral carrier injection |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T09%3A55%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Electroluminescence%20from%20a-SiNx:H/SiO2%20multilayers%20using%20lateral%20carrier%20injection&rft.btitle=2010%20Photonics%20Global%20Conference&rft.au=Kamyab,%20L&rft.date=2010-12&rft.spage=1&rft.epage=2&rft.pages=1-2&rft.isbn=1424498821&rft.isbn_list=9781424498826&rft_id=info:doi/10.1109/PGC.2010.5705975&rft_dat=%3Cieee_6IE%3E5705975%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1424498813&rft.eisbn_list=1424498805&rft.eisbn_list=9781424498802&rft.eisbn_list=9781424498819&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5705975&rfr_iscdi=true |