A fast and low actuation voltage MEMS switch for mm-wave and its integration

A novel mm-wave MEMS single pole single throw (SPST) switch has been developed, which is driven by 5.0 V in 10.3 μs. The insertion loss and the isolation at 60 GHz were 1.2 dB and 18 dB, respectively. A two metal layer silicon interposer technology was also developed. We designed single pole double throw (SPDT) switch module, in which two SPST switch are accommodated on the silicon interposer chip. It consists of 3 μm thick Al wires and 12 μm thick low-k benzocyclobutene (BCB) interlayer dielectrics. They enabled sufficient signal integrity for 60 GHz and higher frequencies.