Submicron low-voltage organic transistors and circuits enabled by high-resolution silicon stencil masks
Using high-resolution silicon stencil masks and employing a resist-free, solvent-free, low-temperature (90°C) fabrication process we have fabricated low-voltage top-contact organic thin-film transistors (TFTs) with a channel length down to 0.8 μm. To observe the scaling requirements and to alleviate...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | Using high-resolution silicon stencil masks and employing a resist-free, solvent-free, low-temperature (90°C) fabrication process we have fabricated low-voltage top-contact organic thin-film transistors (TFTs) with a channel length down to 0.8 μm. To observe the scaling requirements and to alleviate short-channel effects, a thin gate dielectric with a thickness of 5.3 nm is employed. The p-channel TFTs have a record static performance, with a transconductance of 1 S/m, an on/off current ratio of 10 8 , and a subthreshold swing of 100 mV/dec. Unipolar inverters based on p-channel TFTs with a channel length of 1 μm and gate-to-source and gate-to-drain overlaps of 2 μm respond to input signals with frequencies up to 1 MHz. Combining air-stable p-channel and n-channel TFTs we have also realized organic complementary ring oscillators with record low-voltage dynamic performance (signal delay of 30 μs per stage at a supply voltage of 3 V). |
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ISSN: | 0163-1918 2156-017X |
DOI: | 10.1109/IEDM.2010.5703409 |