Implant-Free SiGe Quantum Well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel
A novel bulk-Si based pMOSFET structure is presented featuring a high-mobility SiGe 0.45 channel and raised SiGe 0.25 source/drains. This device offers enhanced scalability with respect to standard pMOS devices, leading to 50% improved drive current. 30nm gate length devices show a high drive curren...
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| creator | Hellings, G Witters, L Krom, R Mitard, J Hikavyy, A Loo, R Schulze, A Eneman, G Kerner, C Franco, J Chiarella, T Takeoka, S Joshua Tseng Wei-e Wang Vandervorst, W Absil, P Biesemans, S Heyns, M De Meyer, K Meuris, M Hoffmann, T |
| description | A novel bulk-Si based pMOSFET structure is presented featuring a high-mobility SiGe 0.45 channel and raised SiGe 0.25 source/drains. This device offers enhanced scalability with respect to standard pMOS devices, leading to 50% improved drive current. 30nm gate length devices show a high drive current of ~580 μA/μm for I OFF =100nA/μm, DIBL=126mV/V, SS=80mV/dec, showing superior electro- statics without halo implants. Finally, the compatibility with additional strain-boosters is demonstrated. |
| doi_str_mv | 10.1109/IEDM.2010.5703335 |
| format | Conference Proceeding |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Electrostatics Implants Logic gates Silicon Silicon germanium Substrates |
| title | Implant-Free SiGe Quantum Well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel |
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