Implant-Free SiGe Quantum Well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel

Implant-Free SiGe Quantum Well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel

A novel bulk-Si based pMOSFET structure is presented featuring a high-mobility SiGe 0.45 channel and raised SiGe 0.25 source/drains. This device offers enhanced scalability with respect to standard pMOS devices, leading to 50% improved drive current. 30nm gate length devices show a high drive curren...

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Hauptverfasser: Hellings, G, Witters, L, Krom, R, Mitard, J, Hikavyy, A, Loo, R, Schulze, A, Eneman, G, Kerner, C, Franco, J, Chiarella, T, Takeoka, S, Joshua Tseng, Wei-e Wang, Vandervorst, W, Absil, P, Biesemans, S, Heyns, M, De Meyer, K, Meuris, M, Hoffmann, T
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electrostatics
Implants
Logic gates
Silicon
Silicon germanium
Substrates
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Beschreibung
Zusammenfassung:A novel bulk-Si based pMOSFET structure is presented featuring a high-mobility SiGe 0.45 channel and raised SiGe 0.25 source/drains. This device offers enhanced scalability with respect to standard pMOS devices, leading to 50% improved drive current. 30nm gate length devices show a high drive current of ~580 μA/μm for I OFF =100nA/μm, DIBL=126mV/V, SS=80mV/dec, showing superior electro- statics without halo implants. Finally, the compatibility with additional strain-boosters is demonstrated.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2010.5703335