Reliability approach of high density Through Silicon Via (TSV)

Reliability approach of high density Through Silicon Via (TSV)

This paper focuses on the link between initial electrical resistance of Through Silicon Via (TSV), and possible failure occurring during Thermal Cycling Test (TCT) and electromigration (EM) tests. Physical analyses reveal the presence of a carbon impurity layer at bottom of the higher resistance TSV...

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Hauptverfasser: Frank, T, Chappaz, Cédrick, Leduc, P, Arnaud, L, Moreau, Stéphane, Thuaire, Aurélie, El Farhane, R, Anghel, L
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Copper
Electromigration
Engineering Sciences
Failure Criterion
Impurities
Micro and nanotechnologies
Microelectronics
Reliability
Resistance
Silicon
Thermal Cycling
Through Silicon Via (TSV)
Through-silicon vias
Tin
Void
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Beschreibung
Zusammenfassung:This paper focuses on the link between initial electrical resistance of Through Silicon Via (TSV), and possible failure occurring during Thermal Cycling Test (TCT) and electromigration (EM) tests. Physical analyses reveal the presence of a carbon impurity layer at bottom of the higher resistance TSVs. This impurity induces failure during TCT, but has no impact on EM time to failure distribution. We also discuss the relevance of different electrical resistance failure criterions after TCT for a single TSV.
DOI:10.1109/EPTC.2010.5702655