Modeling of temperature effect on threshold voltage of ballistic Ge tunneling FET

Modeling of temperature effect on threshold voltage of ballistic Ge tunneling FET

The effect of temperature and scaling of gate length on the threshold voltage of double gate Ge tunneling FET has been studied. The threshold voltage has been determined from transconductance rather than constant current method. In the 10 nm to 50 nm range scaling has almost no effect on threshold v...

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Bibliographische Detailangaben
Hauptverfasser: Siddiqui, S A, Zubair, A, Shoron, O F, Khosru, Q D M
Format: Tagungsbericht
Sprache:eng
Schlagworte:
band to band tunneling
FETs
gate threshold voltage
Logic gates
scaling
temperature
Temperature distribution
Threshold voltage
Transconductance
Tunnel FET
Tunneling
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Zusammenfassung:The effect of temperature and scaling of gate length on the threshold voltage of double gate Ge tunneling FET has been studied. The threshold voltage has been determined from transconductance rather than constant current method. In the 10 nm to 50 nm range scaling has almost no effect on threshold voltage. However, threshold voltage is function of temperature in the range of 250-500 K. Besides, a simple model for threshold voltage incorporating the temperature effect has been developed for ballistic Ge tunneling FET based on the simulated results.
DOI:10.1109/ICELCE.2010.5700671