Design optimization of high frequency op amp using 32 nm CNFET

In this paper high frequency performance of carbon nanotube FET (CNFET) in analog circuit is explored along with the comparison of state-of-the-art CMOS technology in 32 nanometer node. The complete design topology of high gain-high bandwidth op amp is presented here taking into account of optimized...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Hoque, M N F, Ahmad, H, Reza, A K, Mominuzzaman, S M, Harun-Ur-Rashid, A B M
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	ballistic Bandwidth Carbon nanotube field-effect transistor (CNFET) chirality CMOS integrated circuits CNTFETs flicker noise Gain Logic gates Noise Operational amplifiers thermal noise
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