Design optimization of high frequency op amp using 32 nm CNFET

In this paper high frequency performance of carbon nanotube FET (CNFET) in analog circuit is explored along with the comparison of state-of-the-art CMOS technology in 32 nanometer node. The complete design topology of high gain-high bandwidth op amp is presented here taking into account of optimized gate length, pitch, number of tubes, oxide thickness and chirality. Satisfactory improvement is observed for CNFET over CMOS op amp with about 2.5 fold increase in gain and 4.5 fold increase in unity gain frequency for same transistor gate area. Moreover, comprehensive improvements are seen in case of CMRR, PSRR, offset voltage and transient performance at the expense of power and output resistance. Besides, for low power-low bandwidth application an optimum noise performance is achieved in this design.