Extraction of RF equivalent circuit and semiconductor parameters of SOS MOSFETs from S-Parameter measurements
This paper describes the use of on-wafer measured microwave scattering parameters (S-parameters) for the extraction of RF equivalent circuit elements and semiconductor parameters of an SOS MOSFET.
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| creator | Boubals, A Bertling, K Domyo, H Brawley, A Rakic, A D Yeow, Y T |
| description | This paper describes the use of on-wafer measured microwave scattering parameters (S-parameters) for the extraction of RF equivalent circuit elements and semiconductor parameters of an SOS MOSFET. |
| doi_str_mv | 10.1109/COMMAD.2010.5699709 |
| format | Conference Proceeding |
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| ispartof | 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, 2010, p.147-148 |
| issn | 1097-2137 2377-5505 |
| language | eng |
| recordid | cdi_ieee_primary_5699709 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Length measurement Logic gates Semiconductor device measurement |
| title | Extraction of RF equivalent circuit and semiconductor parameters of SOS MOSFETs from S-Parameter measurements |
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