Extraction of RF equivalent circuit and semiconductor parameters of SOS MOSFETs from S-Parameter measurements

Extraction of RF equivalent circuit and semiconductor parameters of SOS MOSFETs from S-Parameter measurements

This paper describes the use of on-wafer measured microwave scattering parameters (S-parameters) for the extraction of RF equivalent circuit elements and semiconductor parameters of an SOS MOSFET.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Boubals, A, Bertling, K, Domyo, H, Brawley, A, Rakic, A D, Yeow, Y T
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Length measurement
Logic gates
Semiconductor device measurement
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This paper describes the use of on-wafer measured microwave scattering parameters (S-parameters) for the extraction of RF equivalent circuit elements and semiconductor parameters of an SOS MOSFET.
ISSN:1097-2137
2377-5505
DOI:10.1109/COMMAD.2010.5699709