An 800 volts high voltage interconnection level shifter using Floating Poly Field Plate (FPFP) method

An 800V LDMOS high voltage level shifter circuit using Floating Poly Field Plate (FPFP) method is proposed in this paper. In conventional structure, breakdown voltage drops for almost 65-70% from the original breakdown while crossing the High Voltage Interconnection (HVI) metal line over the high-vo...

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Bibliographische Detailangaben

Hauptverfasser:	Sihombing, R O, Gene Sheu, Shao-Ming Yang, Wasisto, H S, Yu-Feng Guo, Shang-Hui Tu, Yu-Lung Chin, Jin-Shyong Jan, Chia-Hao Lee
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Breakdown voltage Electric breakdown Electric fields Integrated circuit interconnections Metals P-n junctions
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