An 800 volts high voltage interconnection level shifter using Floating Poly Field Plate (FPFP) method

An 800V LDMOS high voltage level shifter circuit using Floating Poly Field Plate (FPFP) method is proposed in this paper. In conventional structure, breakdown voltage drops for almost 65-70% from the original breakdown while crossing the High Voltage Interconnection (HVI) metal line over the high-voltage p-n junction. Compared to the conventional method, FPFP method would drastically reduce the influence of the interconnection, from 67% to less than 10% Furthermore, the study of HVI effect, different FPFP design scheme, FPFP length variation, and mask design layout consideration will be discussed in this paper.