An 800 volts high voltage interconnection level shifter using Floating Poly Field Plate (FPFP) method
An 800V LDMOS high voltage level shifter circuit using Floating Poly Field Plate (FPFP) method is proposed in this paper. In conventional structure, breakdown voltage drops for almost 65-70% from the original breakdown while crossing the High Voltage Interconnection (HVI) metal line over the high-vo...
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| creator | Sihombing, R O Gene Sheu Shao-Ming Yang Wasisto, H S Yu-Feng Guo Shang-Hui Tu Yu-Lung Chin Jin-Shyong Jan Chia-Hao Lee |
| description | An 800V LDMOS high voltage level shifter circuit using Floating Poly Field Plate (FPFP) method is proposed in this paper. In conventional structure, breakdown voltage drops for almost 65-70% from the original breakdown while crossing the High Voltage Interconnection (HVI) metal line over the high-voltage p-n junction. Compared to the conventional method, FPFP method would drastically reduce the influence of the interconnection, from 67% to less than 10% Furthermore, the study of HVI effect, different FPFP design scheme, FPFP length variation, and mask design layout consideration will be discussed in this paper. |
| doi_str_mv | 10.1109/TENCON.2010.5685878 |
| format | Conference Proceeding |
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In conventional structure, breakdown voltage drops for almost 65-70% from the original breakdown while crossing the High Voltage Interconnection (HVI) metal line over the high-voltage p-n junction. Compared to the conventional method, FPFP method would drastically reduce the influence of the interconnection, from 67% to less than 10% Furthermore, the study of HVI effect, different FPFP design scheme, FPFP length variation, and mask design layout consideration will be discussed in this paper.</description><identifier>ISSN: 2159-3442</identifier><identifier>ISBN: 9781424468898</identifier><identifier>ISBN: 1424468892</identifier><identifier>EISSN: 2159-3450</identifier><identifier>EISBN: 1424468884</identifier><identifier>EISBN: 9781424468881</identifier><identifier>EISBN: 1424468906</identifier><identifier>EISBN: 9781424468904</identifier><identifier>DOI: 10.1109/TENCON.2010.5685878</identifier><language>eng</language><publisher>IEEE</publisher><subject>Breakdown voltage ; Electric breakdown ; Electric fields ; Integrated circuit interconnections ; Metals ; P-n junctions</subject><ispartof>TENCON 2010 - 2010 IEEE Region 10 Conference, 2010, p.71-74</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c225t-f7979024b28f894f0cf2773daf7b66b8140116cb2783558aa6f227dbaef8bf933</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5685878$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,27916,54911</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5685878$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Sihombing, R O</creatorcontrib><creatorcontrib>Gene Sheu</creatorcontrib><creatorcontrib>Shao-Ming Yang</creatorcontrib><creatorcontrib>Wasisto, H S</creatorcontrib><creatorcontrib>Yu-Feng Guo</creatorcontrib><creatorcontrib>Shang-Hui Tu</creatorcontrib><creatorcontrib>Yu-Lung Chin</creatorcontrib><creatorcontrib>Jin-Shyong Jan</creatorcontrib><creatorcontrib>Chia-Hao Lee</creatorcontrib><title>An 800 volts high voltage interconnection level shifter using Floating Poly Field Plate (FPFP) method</title><title>TENCON 2010 - 2010 IEEE Region 10 Conference</title><addtitle>TENCON</addtitle><description>An 800V LDMOS high voltage level shifter circuit using Floating Poly Field Plate (FPFP) method is proposed in this paper. In conventional structure, breakdown voltage drops for almost 65-70% from the original breakdown while crossing the High Voltage Interconnection (HVI) metal line over the high-voltage p-n junction. Compared to the conventional method, FPFP method would drastically reduce the influence of the interconnection, from 67% to less than 10% Furthermore, the study of HVI effect, different FPFP design scheme, FPFP length variation, and mask design layout consideration will be discussed in this paper.</description><subject>Breakdown voltage</subject><subject>Electric breakdown</subject><subject>Electric fields</subject><subject>Integrated circuit interconnections</subject><subject>Metals</subject><subject>P-n junctions</subject><issn>2159-3442</issn><issn>2159-3450</issn><isbn>9781424468898</isbn><isbn>1424468892</isbn><isbn>1424468884</isbn><isbn>9781424468881</isbn><isbn>1424468906</isbn><isbn>9781424468904</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo9UEtPwzAYCy-JMfYLdskRDh1JmseX4zStgDRtPYzzlLZJG5S1aA2T9u8pMPDFli1ZshGaUjKjlOin7XK92KxnjAyGkCBAwQW6o5xxLgGAX6IRo0InKRfkCk20gr9Mw_V_xtktmvT9OxkgCSOgRsjOWwyE4GMXYo8bXzc_0tQW-zbaQ9m1rS2j71oc7NEG3DfeDT7-7H1b4yx0Jn6LvAsnnHkbKpwHEy1-yPIsf8R7G5uuukc3zoTeTs48Rm_Zcrt4SVab59fFfJWUjImYOKWVJowXDBxo7kjpmFJpZZwqpCyGUYRSWRZMQSoEGCMdY6oqjHVQOJ2mYzT97fXW2t3Hwe_N4bQ7P5Z-AeuKWtA</recordid><startdate>201011</startdate><enddate>201011</enddate><creator>Sihombing, R O</creator><creator>Gene Sheu</creator><creator>Shao-Ming Yang</creator><creator>Wasisto, H S</creator><creator>Yu-Feng Guo</creator><creator>Shang-Hui Tu</creator><creator>Yu-Lung Chin</creator><creator>Jin-Shyong Jan</creator><creator>Chia-Hao Lee</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201011</creationdate><title>An 800 volts high voltage interconnection level shifter using Floating Poly Field Plate (FPFP) method</title><author>Sihombing, R O ; Gene Sheu ; Shao-Ming Yang ; Wasisto, H S ; Yu-Feng Guo ; Shang-Hui Tu ; Yu-Lung Chin ; Jin-Shyong Jan ; Chia-Hao Lee</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c225t-f7979024b28f894f0cf2773daf7b66b8140116cb2783558aa6f227dbaef8bf933</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Breakdown voltage</topic><topic>Electric breakdown</topic><topic>Electric fields</topic><topic>Integrated circuit interconnections</topic><topic>Metals</topic><topic>P-n junctions</topic><toplevel>online_resources</toplevel><creatorcontrib>Sihombing, R O</creatorcontrib><creatorcontrib>Gene Sheu</creatorcontrib><creatorcontrib>Shao-Ming Yang</creatorcontrib><creatorcontrib>Wasisto, H S</creatorcontrib><creatorcontrib>Yu-Feng Guo</creatorcontrib><creatorcontrib>Shang-Hui Tu</creatorcontrib><creatorcontrib>Yu-Lung Chin</creatorcontrib><creatorcontrib>Jin-Shyong Jan</creatorcontrib><creatorcontrib>Chia-Hao Lee</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sihombing, R O</au><au>Gene Sheu</au><au>Shao-Ming Yang</au><au>Wasisto, H S</au><au>Yu-Feng Guo</au><au>Shang-Hui Tu</au><au>Yu-Lung Chin</au><au>Jin-Shyong Jan</au><au>Chia-Hao Lee</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>An 800 volts high voltage interconnection level shifter using Floating Poly Field Plate (FPFP) method</atitle><btitle>TENCON 2010 - 2010 IEEE Region 10 Conference</btitle><stitle>TENCON</stitle><date>2010-11</date><risdate>2010</risdate><spage>71</spage><epage>74</epage><pages>71-74</pages><issn>2159-3442</issn><eissn>2159-3450</eissn><isbn>9781424468898</isbn><isbn>1424468892</isbn><eisbn>1424468884</eisbn><eisbn>9781424468881</eisbn><eisbn>1424468906</eisbn><eisbn>9781424468904</eisbn><abstract>An 800V LDMOS high voltage level shifter circuit using Floating Poly Field Plate (FPFP) method is proposed in this paper. In conventional structure, breakdown voltage drops for almost 65-70% from the original breakdown while crossing the High Voltage Interconnection (HVI) metal line over the high-voltage p-n junction. Compared to the conventional method, FPFP method would drastically reduce the influence of the interconnection, from 67% to less than 10% Furthermore, the study of HVI effect, different FPFP design scheme, FPFP length variation, and mask design layout consideration will be discussed in this paper.</abstract><pub>IEEE</pub><doi>10.1109/TENCON.2010.5685878</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 2159-3442 |
| ispartof | TENCON 2010 - 2010 IEEE Region 10 Conference, 2010, p.71-74 |
| issn | 2159-3442 2159-3450 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Breakdown voltage Electric breakdown Electric fields Integrated circuit interconnections Metals P-n junctions |
| title | An 800 volts high voltage interconnection level shifter using Floating Poly Field Plate (FPFP) method |
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