Comparison of TiO2-doped SiO2 films from two organosilicon precursors

Comparison of TiO2-doped SiO2 films from two organosilicon precursors

In present work the effect of two different source of silicon Tetraethylorthosilicate and Octamethylcyclotetrasiloxane on TiO 2 -doped SiO 2 films have been studied. The study reveals that film properties depend on the precursors used for deposition. The optical, chemical and surface properties have...

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Bibliographische Detailangaben
Hauptverfasser: Bange, J P, Patil, L S, Gautam, D K
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Ellipsometry
Fires
Octamethylcyclotetrasiloxane
Optical films
Optical waveguides
Silicon
Tetraetylorthosilicate
TiO 2 -doped SiO 2
X-ray scattering
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Beschreibung
Zusammenfassung:In present work the effect of two different source of silicon Tetraethylorthosilicate and Octamethylcyclotetrasiloxane on TiO 2 -doped SiO 2 films have been studied. The study reveals that film properties depend on the precursors used for deposition. The optical, chemical and surface properties have been characterized using ellipsometer and SEM with EDAX.
ISSN:2162-108X
2162-1098
DOI:10.1109/ACP.2010.5682745